The world of semiconductor manufacturing demands precision at every stage. An essential element in producing smooth and defect-free SiC wafers is the use of Chemical Mechanical Planarisation (CMP) slurries. Among the critical components of these slurries is high-purity aluminium oxide (Al2O3). In this blog post, we delve into how high-purity aluminium oxide contributes to CMP slurries for silicon carbide wafers, enhancing their quality and performance.

1. The Role of CMP in Semiconductor Fabrication CMP is a vital process in semiconductor manufacturing, especially when working with materials like silicon carbide. It involves simultaneously applying chemical and mechanical forces to achieve precise planarisation and surface smoothing. This step is crucial to ensure optimal performance of integrated circuits and other electronic components.

2. High-Purity Aluminium Oxide: A Precision Partner High-purity aluminium oxide (Al2O3) serves as an abrasive in CMP slurries. Its controlled particle size and exceptional hardness make it ideal for gently removing material from the silicon carbide wafers’ surface. The high level of purity ensures that the abrasive particles do not introduce contaminants that could compromise the wafers’ integrity.

3. Uniform Material Removal Aluminium oxide abrasives in CMP slurries interact with the silicon carbide surface, effectively removing uneven topography, scratches, and defects. The controlled abrasion creates a flat and smooth surface, which is essential for subsequent processing steps and optimal device performance.

4. Minimised Surface Damage High-purity aluminium oxide’s hardness plays a pivotal role in achieving material removal while minimising surface damage. The precise control over particle size and distribution ensures that the abrasive action is uniform, preventing over-aggressive material removal that could lead to surface irregularities.

5. Enabling High-Performance Devices The use of high-purity aluminium oxide in CMP slurries directly contributes to the production of high-performance SiC wafers. The smooth, defect-free surfaces achieved through CMP ensure optimal device functionality and reliability, crucial in applications ranging from power electronics to aerospace components.

In conclusion, high-purity aluminium oxide stands as a critical ingredient in the world of CMP slurries for silicon carbide wafers. Its controlled abrasiveness, minimal surface damage, and purity ensure precision in material removal and surface planarisation. As the semiconductor industry continues to advance, the role of high-purity aluminium oxide in enabling the production of high-quality SiC wafers highlights the significance of materials science in shaping the future of electronics.

Alpha HPA has engaged a 3rd party to conduct some test work using our nano-alumina powder for CMP slurries with some positive results. In the study,  our Nano Alumina showed high removal rates at lower temperatures than other alternative CMP slurries. Explore the possibilities of Alpha HPA high-purity aluminium oxide in CMP slurry for silicon carbide wafers by reaching out to our Sales & Marketing Manager Derek Bogaert to set up a discovery call with Alpha HPA to find out more: hello@alphahpa.com.au